2012, ISBN: 1461402689
Autor: B. Jayant Baliga. Sprache: englisch. Nachträgliche Adressänderungen sind leider nicht möglich. Aus technischen Gründen können wir das ?Nachricht hinzufügen-Feld? nicht auswerten. K… Más…
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Advanced High Voltage Power Device Concepts / B. Jayant Baliga / Buch / HC gerader Rücken kaschiert / XVI / Englisch / 2011 / Springer New York / EAN 9781461402688 - encuadernado, tapa blanda
2011, ISBN: 9781461402688
[ED: Gebunden], [PU: Springer New York], The devices described in ¿Advanced MOS-Gated Thyristor Concepts¿ are utilized in microelectronics production equipment, in power transmission equi… Más…
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2020, ISBN: 9781461402688
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ISBN: 9781461402688
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor cont… Más…
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2011, ISBN: 9781461402688
[PU: Springer US], Neubindung, Buchschnitt leicht verkürzt, Buchecken leicht angestoßen, Ausgabe 2011 10667277/12, DE, [SC: 0.00], gebraucht; sehr gut, gewerbliches Angebot, 2012, Bankübe… Más…
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2012, ISBN: 1461402689
Autor: B. Jayant Baliga. Sprache: englisch. Nachträgliche Adressänderungen sind leider nicht möglich. Aus technischen Gründen können wir das ?Nachricht hinzufügen-Feld? nicht auswerten. K… Más…
Baliga, B. Jayant:
Advanced High Voltage Power Device Concepts / B. Jayant Baliga / Buch / HC gerader Rücken kaschiert / XVI / Englisch / 2011 / Springer New York / EAN 9781461402688 - encuadernado, tapa blanda2011, ISBN: 9781461402688
[ED: Gebunden], [PU: Springer New York], The devices described in ¿Advanced MOS-Gated Thyristor Concepts¿ are utilized in microelectronics production equipment, in power transmission equi… Más…
2020
ISBN: 9781461402688
[ED: Buch], [PU: Springer New York], Neuware - The devices described in 'Advanced MOS-Gated Thyristor Concepts' are utilized in microelectronics production equipment, in power transmissio… Más…
ISBN: 9781461402688
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor cont… Más…
2011, ISBN: 9781461402688
[PU: Springer US], Neubindung, Buchschnitt leicht verkürzt, Buchecken leicht angestoßen, Ausgabe 2011 10667277/12, DE, [SC: 0.00], gebraucht; sehr gut, gewerbliches Angebot, 2012, Bankübe… Más…
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Detalles del libro - Advanced High Voltage Power Device Concepts
EAN (ISBN-13): 9781461402688
ISBN (ISBN-10): 1461402689
Tapa dura
Tapa blanda
Año de publicación: 2011
Editorial: Springer New York
568 Páginas
Peso: 0,990 kg
Idioma: Englisch
Libro en la base de datos desde 2007-12-29T01:28:11+01:00 (Madrid)
Página de detalles modificada por última vez el 2023-08-22T23:45:24+02:00 (Madrid)
ISBN/EAN: 1461402689
ISBN - escritura alterna:
1-4614-0268-9, 978-1-4614-0268-8
Mode alterno de escritura y términos de búsqueda relacionados:
Autor del libro: bali, jayant baliga, mills
Título del libro: concepts advanced, volta, high power, high concept, high voltage
Datos del la editorial
Autor: B. Jayant Baliga
Título: Advanced High Voltage Power Device Concepts
Editorial: Springer; Springer US
568 Páginas
Año de publicación: 2011-09-20
New York; NY; US
Impreso en
Peso: 1,033 kg
Idioma: Inglés
213,99 € (DE)
219,99 € (AT)
236,00 CHF (CH)
POD
XVI, 568 p.
BB; Power Electronics, Electrical Machines and Networks; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektrotechnik; Verstehen; Emitter Switched Thyristor; Insulated Gate Bipolar Transistors; MOS-Controlled Thyristors; Semiconductors; SiC Devices; Circuits and Systems; Electronics and Microelectronics, Instrumentation; Solid State Physics; Electrical Power Engineering; Electronic Circuits and Systems; Electronics and Microelectronics, Instrumentation; Condensed Matter Physics; Schaltkreise und Komponenten (Bauteile); Elektronik; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); BC; EA
1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.
Provides the first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets
Includes analytical formulations for all the device structures with validation performed using numerical simulations
Analyzes potential silicon carbide structures that could compete with the silicon devices and includes a comparison of the devices
Includes supplementary material: sn.pub/extras
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